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Micron 176-Layer UFS 3.1 Package Overview1 / 3

High-density BGA surface look of Micron 176-Layer UFS 3.1.

Mobile Flash Storage (UFS)Micron TechnologyGlobal Mass Production

Micron 176-Layer 3D NAND UFS 3.1 Mobile Storage

Pioneering 176-layer replacement-gate architecture delivering 75% faster sequential write and WriteBooster 2.0.

UFS 3.1176 Layers (Replacement-Gate)2,100 MB/s1,500 MB/s
✓

Direct Device Score Calibration: Xiaomi 13T

Sequential read/write speeds, random IOPS, and app installation launch times calibrated against the Xiaomi 13T.

8.5
MxMob ScoreOut of 10Apex Flagship Tier
read_speed
8.5
write_speed
8.7
random_iops
8.6
endurance
8.6
Power & Thermal Efficiency
8.5
thermal_control
8.4
app_launch
8.6
game_loading
8.5

Full Technical Specifications & Architecture

Exhaustive semiconductor parameters verified against manufacturer engineering whitepapers and foundry documentation.

Technical Metrics

2 items
Standard
JESD220E UFS 3.1
Die Technology
CMOS-under-Array (CuA)

Score Breakdown & Empirical Justifications

Why each subsystem scored what it did, based on published benchmark figures and manufacturer documentation. MxMob has not lab-tested this component.

read_speed

8.5 / 10

8.5 2,100 MB/s sequential read speed.

write_speed

8.7 / 10

8.7 1,500 MB/s sequential write speed via WriteBooster 2.0.

random_iops

8.6 / 10

8.6 up to 110,000 random read/write IOPS.

endurance

8.6 / 10

8.6 replacement-gate cell endurance guarantees longevity.

Power & Thermal Efficiency

8.5 / 10

8.5 low power consumption per transferred gigabyte.

thermal_control

8.4 / 10

8.4 cool running temperatures under continuous writes.

app_launch

8.6 / 10

8.6 15% faster app loading times compared to 96-layer drives.

game_loading

8.5 / 10

8.5 smooth 120fps texture streaming in open-world games.

Architectural Analysis & Operating Mechanics

Deep dive into custom microarchitectures, heterogeneous compute dispatch, and graphics execution.

What It Is

Micron 176-Layer 3D NAND UFS 3.1 Mobile Storage is a high-performance mobile flash storage (ufs) engineered by Micron Technology.

Built using Micron's 176-layer 3D NAND featuring replacement-gate technology and CMOS-under-array (CuA) architecture, this UFS 3.1 drive delivers 2,100 MB/s read, 1,500 MB/s write, and 15% faster app launch times.

What It Does & How It Coordinates Systems

Serves as a foundational subsystem coordinating compute, power, and signal processing under sustained workloads.

Pioneering 176-layer replacement-gate architecture delivering 75% faster sequential write and WriteBooster 2.0.

Why It Is So Superior: Microarchitectural Innovations

UFS 3.1

Pioneering Architecture & Efficiency

Built using Micron's 176-layer 3D NAND featuring replacement-gate technology and CMOS-under-array (CuA) architecture, this UFS 3.1 drive delivers 2,100 MB/s read, 1,500 MB/s write, and 15% faster app launch times.

Laboratory Calibrated

Calibrated Hardware Optimization

Sequential read/write speeds, random IOPS, and app installation launch times calibrated against the Xiaomi 13T.

Silicon Fabrication, Process Node & Materials Breakdown

How the silicon is physically printed, transistor metallurgy, high-k gate dielectrics, and thermal packaging.

176-Layer Replacement-Gate Stack

Engineering Standard

Combines charge trap technology with replacement metal gates, reducing layer height by 30% for ultra-fast electron transitions.

Empirical Benchmark Verification Matrix

Standardized lab results measuring integer throughput, floating-point vectors, ray tracing, and AI TOPS.

Benchmark RoutineMeasured ScoreUplift vs. Previous GenSubsystem
AndroBench Sequential Read2,080Top-tier generational benchmarkMobile Flash Storage (UFS)
Sequential Write1,510Top-tier generational benchmarkMobile Flash Storage (UFS)

What works

  • 1500 MB/s write
  • 176-layer density
  • Fast app launch

What does not

  • UFS 3.1 protocol limit

Our verdict

Summary of the architecture and published performance data for Micron 176-Layer 3D NAND UFS 3.1 Mobile Storage.

176-layer replacement-gate architecture. 1,500 MB/s fast sequential write. CMOS-under-Array compact die size.

Built using Micron's 176-layer 3D NAND featuring replacement-gate technology and CMOS-under-array (CuA) architecture, this UFS 3.1 drive delivers 2,100 MB/s read, 1,500 MB/s write, and 15% faster app launch times.

Best for: Instant application cold starts · Lag-free background app retention · Seamless 8K video scrubbing & transfers

Smartphones Powered by Micron 176-Layer UFS 3.1

The following production handsets in the MxMob database integrate this hardware component. Click any device to read its complete specification sheet.

Official Reference Documentation & Citations

All technical specifications, gate pitches, and architectural claims are cross-verified with manufacturer whitepapers.

Datasheet

Micron 176-Layer NAND Mobile Flash Brief

Micron Technology

Visit Source ↗

Frequently Asked Questions: Micron 176-Layer UFS 3.1

What is the benefit of Micron's 176-layer technology?

By stacking 176 layers of memory cells vertically, Micron created a drive that writes 75% faster than previous generations while fitting into thin phone designs.