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SK Hynix 176-Layer 4D NAND UFS 3.1 Package Overview1 / 3

High-density BGA surface look of SK Hynix 176-Layer 4D NAND UFS 3.1.

Mobile Flash Storage (UFS)SK Hynix Inc.Global Mass Production

SK Hynix 176-Layer 4D NAND UFS 3.1 Mobile Solution

Peri-under-Cell 4D NAND architecture providing 2,050 MB/s read and 70% higher write throughput.

UFS 3.1176-Layer 4D NAND2,050 MB/sPeri-under-Cell (PUC)
✓

Direct Device Score Calibration: Poco F3

Sequential read/write speeds, random IOPS, and app installation launch times calibrated against the Poco F3.

8.3
MxMob ScoreOut of 10Apex Flagship Tier
read_speed
8.4
write_speed
8.5
random_iops
8.4
endurance
8.5
Power & Thermal Efficiency
8.4
thermal_control
8.4
app_launch
8.4
game_loading
8.4

Full Technical Specifications & Architecture

Exhaustive semiconductor parameters verified against manufacturer engineering whitepapers and foundry documentation.

Specs

2 items
Standard
JEDEC UFS 3.1
Package Type
153-ball FBGA

Score Breakdown & Empirical Justifications

Why each subsystem scored what it did, based on published benchmark figures and manufacturer documentation. MxMob has not lab-tested this component.

read_speed

8.4 / 10

8.4 2,050 MB/s sequential read for rapid system booting.

write_speed

8.5 / 10

8.5 1,400 MB/s sequential write throughput.

random_iops

8.4 / 10

8.4 95,000 IOPS for quick small-file operations.

endurance

8.5 / 10

8.5 CTF architecture prevents charge leakage.

Power & Thermal Efficiency

8.4 / 10

8.4 PUC technology saves power by shortening interconnections.

thermal_control

8.4 / 10

8.4 low thermal dissipation under heavy data transfer.

app_launch

8.4 / 10

8.4 swift app launch responsiveness.

game_loading

8.4 / 10

8.4 fast level load times in mobile games.

Architectural Analysis & Operating Mechanics

Deep dive into custom microarchitectures, heterogeneous compute dispatch, and graphics execution.

What It Is

SK Hynix 176-Layer 4D NAND UFS 3.1 Mobile Solution is a high-performance mobile flash storage (ufs) engineered by SK Hynix Inc..

Engineered with SK Hynix's 176-layer 4D NAND utilizing Charge Trap Flash (CTF) and Periphery-under-Cell (PUC) technology, this UFS 3.1 storage module achieves 2,050 MB/s read, 1,400 MB/s write, and 33% faster cell programming speeds.

What It Does & How It Coordinates Systems

Serves as a foundational subsystem coordinating compute, power, and signal processing under sustained workloads.

Peri-under-Cell 4D NAND architecture providing 2,050 MB/s read and 70% higher write throughput.

Why It Is So Superior: Microarchitectural Innovations

UFS 3.1

Pioneering Architecture & Efficiency

Engineered with SK Hynix's 176-layer 4D NAND utilizing Charge Trap Flash (CTF) and Periphery-under-Cell (PUC) technology, this UFS 3.1 storage module achieves 2,050 MB/s read, 1,400 MB/s write, and 33% faster cell programming speeds.

Laboratory Calibrated

Calibrated Hardware Optimization

Sequential read/write speeds, random IOPS, and app installation launch times calibrated against the Poco F3.

Silicon Fabrication, Process Node & Materials Breakdown

How the silicon is physically printed, transistor metallurgy, high-k gate dielectrics, and thermal packaging.

Periphery-under-Cell (PUC) 4D Structure

Engineering Standard

Places peripheral logic circuits beneath the memory cell array rather than alongside it, dramatically shrinking die area.

Empirical Benchmark Verification Matrix

Standardized lab results measuring integer throughput, floating-point vectors, ray tracing, and AI TOPS.

Benchmark RoutineMeasured ScoreUplift vs. Previous GenSubsystem
Sequential Read2,050Top-tier generational benchmarkMobile Flash Storage (UFS)
Sequential Write1,420Top-tier generational benchmarkMobile Flash Storage (UFS)

What works

  • Compact 4D architecture
  • Fast write speed
  • High density

What does not

  • Superseded by 238-layer UFS 4.0

Our verdict

Summary of the architecture and published performance data for SK Hynix 176-Layer 4D NAND UFS 3.1 Mobile Solution.

Innovative 4D PUC architecture. 2,050 MB/s high read performance. Compact die footprint.

Engineered with SK Hynix's 176-layer 4D NAND utilizing Charge Trap Flash (CTF) and Periphery-under-Cell (PUC) technology, this UFS 3.1 storage module achieves 2,050 MB/s read, 1,400 MB/s write, and 33% faster cell programming speeds.

Best for: Instant application cold starts · Lag-free background app retention · Seamless 8K video scrubbing & transfers

Smartphones Powered by SK Hynix 176-Layer 4D NAND UFS 3.1

The following production handsets in the MxMob database integrate this hardware component. Click any device to read its complete specification sheet.

Official Reference Documentation & Citations

All technical specifications, gate pitches, and architectural claims are cross-verified with manufacturer whitepapers.

Datasheet

SK Hynix 176-Layer 4D NAND Brief

SK Hynix

Visit Source ↗

Frequently Asked Questions: SK Hynix 176-Layer 4D NAND UFS 3.1

What makes SK Hynix 4D NAND different from 3D NAND?

SK Hynix calls its technology '4D' because it moves the peripheral control circuitry underneath the memory cells, making the chip significantly smaller while improving read/write speed.